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этимология

MOS transistor - перевод на русский

TYPE OF FIELD-EFFECT TRANSISTOR

Mos technology; Metal oxide semiconductor field-effect transistor; MOSFETs; Metal-Oxide-Semiconductor Field-Effect Transistor; Double Diffused MOS; IGFET; Mosfet; Metal Oxide Semiconductor; Mosfets; DMOS; Mofset; Metal–oxide–semiconductor structure; Dmos; MOS FET; CMOSFET; Metal-Oxide-Semiconductor structure; MISFET; Metal oxide semiconductor; Metal–Oxide–Semiconductor structure; N-FET; Metal oxide semiconductor field effect transistor; Metal-oxide-semiconductor field-effect transistor; Metal-oxide-semiconductor structure; Metal–oxide–semiconductor field-effect transistor; Metal–Oxide–Semiconductor Field-Effect Transistor; Metal–Oxide–Semiconductor field-effect transistor; MOS capacitor; Metal-oxide-semiconductor; MOSFET heatsink; MOSFET heat sink; Metal-Insulator-Semiconductor Field-Effect Transistor; Metal–oxide–semiconductor; Igfet; Metal-oxide-silicon; Insulated-gate Field-effect Transistor; Insulated gate Field-effect Transistor; Insulated gate Field-Effect transistor; Insulated Gate Field-effect Transistor; Metal Oxide Semiconductor Field Effect Transistor; MOS-FET; Insulated gate field-effect transistor; Dual-gate FET; Dual-gate field-effect transistor; Metal-Oxide-Semiconductor field-effect transistor; Metal-oxide semiconductor; NFET; MOSFET scaling; NMOS transistor; PMOS transistor; PMOS FET; NMOS FET; MOS transistor; MOS technology; Metal–oxide–silicon

MOS transistor

общая лексика

полевой транзистор типа металл-окисел-полупроводник

MOSFET

общая лексика

(Metal Oxide Semiconductor Field Effect Transistor) полевой транзистор с МОП (метал-оксид-полупроводник) структурой затвора

transistor-transistor logic

CLASS OF DIGITAL CIRCUITS BUILT FROM BIPOLAR JUNCTION TRANSISTORS (BJTS) AND RESISTORS; TRANSISTORS PERFORM BOTH THE LOGIC FUNCTION (E.G. AND) AND THE AMPLIFYING FUNCTION

Transistor transistor logic; Transistor-transistor logic; LVTTL; Transistor Transistor Logic; FJ series; TTL logic; Transistor-to-transistor logic; Transistor-coupled transistor logic; TCTL; TTL (electronics); TTL (logic)

общая лексика

ТТЛ

транзисторно-транзисторная логика

вычислительная техника

логика транзистор-транзисторная

Определение

Transistor-Transistor Logic

(TTL) A common semiconductor technology for building discrete digital logic integrated circuits. It originated from {Texas Instruments} in 1965. There have been several series of TTL logic: 7400: 10 ns propagation time, 10 mW/gate power consumption, obsolete; 74L00: Low power: higher resistances, less dissipation (1 mW), longer propagation time (30 ns); 74H00: High power: lower resistances, more dissipation: less sensitivity for noise; 74S00: Schottky-clamped: faster switching (3 ns, 19 mW) by using Schottky diodes to prevent the transistors from saturation; 74LS00: Low power, Schottky-clamped (10 ns, 2 mW); 74AS00: Advanced Schottky: faster switching, less dissipation, (1.5 ns, 10 mW); 74ALS00: Advanced Low power Schottky (4 ns, 1.3 mW). For each 74xxx family there is a corresponding 54xxx family. The 74 series are specified for operation at 0 - 70 C whereas the 54 (military) series can operate at -55 - 125 C See also CMOS, ECL.

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Википедия

MOSFET

The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET. Another synonym is IGFET for insulated-gate field-effect transistor.

The basic principle of the field-effect transistor was first patented by Julius Edgar Lilienfeld in 1925.

The main advantage of a MOSFET is that it requires almost no input current to control the load current, when compared with bipolar transistors (bipolar junction transistors/BJTs). In an enhancement mode MOSFET, voltage applied to the gate terminal increases the conductivity of the device. In depletion mode transistors, voltage applied at the gate reduces the conductivity.

The "metal" in the name MOSFET is sometimes a misnomer, because the gate material can be a layer of polysilicon (polycrystalline silicon). Similarly, "oxide" in the name can also be a misnomer, as different dielectric materials are used with the aim of obtaining strong channels with smaller applied voltages.

The MOSFET is by far the most common transistor in digital circuits, as billions may be included in a memory chip or microprocessor. Since MOSFETs can be made with either p-type or n-type semiconductors, complementary pairs of MOS transistors can be used to make switching circuits with very low power consumption, in the form of CMOS logic.

https://en.wikipedia.org/wiki/MOSFET

Как переводится MOS transistor на Русский язык